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2 edition of Thin films of gallium arsenide on low-cost substrates. found in the catalog.

Thin films of gallium arsenide on low-cost substrates.

Rockwell International. Electronics Research Center.

Thin films of gallium arsenide on low-cost substrates.

by Rockwell International. Electronics Research Center.

  • 353 Want to read
  • 30 Currently reading

Published by Dept of Energy, for sale by the National Technical Information Service in [Washington], Springfield, Va .
Written in English

    Subjects:
  • Thin films.,
  • Gallium arsenide.,
  • Photovoltaic power generation.

  • Edition Notes

    ContributionsNelson, N. J., Varian Associates., United States. Energy Research and Development Administration. Division of Solar Energy., United States. Dept. of Energy.
    The Physical Object
    Paginationv. :
    ID Numbers
    Open LibraryOL17650860M

      Abstract. Thin-film homojunction gallium arsenide solar cells of p + /n/n + configuration have been deposited on tungsten coated graphic substrates by the reaction of gallium, hydrogen chloride, and arsine containing appropriate dopants. Solar cells of 8-cm 2 area with an AM1 efficiency of about 7% have been prepared for the first time. The solar cells are characterized by dark and Cited by: 4. Thin-film InAs/GaAs quantum dot solar cells on mechanically flexible plastic films are fabricated. A µm-thick compound semiconductor photovoltaic layer was grown on a GaAs substrate, and then transferred onto a plastic film through a bonding technique. Our bonding scheme is mediated by a metal-epoxy agent for the realization of bonding at low temperatures (below °C.

      (d) Operating temperatures of thin-film and substrate-based GaAs solar cells under AM G simulated solar illumination at suns concentration, measured using Cited by: Get this from a library! Gallium arsenide thin films on tungsten/graphite substrates: phase II.. [Shirley S Chu; Southern Methodist University.; United States. Department of Energy.].

    Supplementary Figure S1 Photos of GaAs substrate surfaces after ELO (a) conventional ELO and (b) Novel ELO process and the lifted GaAs thin film. The surface usually becomes dark and rough after the conventional ELO process due to the accumulation of etching residues and . Thin‐film homojunction gallium arsenide solar cells of p + /n/n + configuration have been deposited on tungsten coated graphic substrates by the reaction of gallium, hydrogen chloride, and arsine containing appropriate dopants. Solar cells of 8‐cm 2 area with an AM1 efficiency of Cited by: 4.


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Thin films of gallium arsenide on low-cost substrates by Rockwell International. Electronics Research Center. Download PDF EPUB FB2

@article{osti_, title = {Thin films of gallium arsenide on low-cost substrates. The metalorganic chemical vapor deposition (MO-CVD) technique was applied to the growth of thin films of GaAs and GaAlAs on inexpensive polycrystalline or amorphous substrate materials.

The properties of grain boundaries in polycrystalline GaAs films were studied by the use of transport measurements as a function of temperature. Schottky barrier solar cells of approximately 3 Author: R. Ruth, P. Dapkus, R. Dupuis, R. Johnson, L. Moudy, J. Yang, R.

Yingling. The metallorganic chemical vapor deposition (MO-CVD) technique was applied to the growth of thin films of GaAs and GaAlAs on inexpensive polycrystalline or amorphous substrate materials (glasses, glass-ceramics, aluminum ceramics, and metals) for use in fabrication of large area low cost photovoltaic device structures.

Polycrystalline GaAs films have now been grown on all of the low cost Author: R. Ruth, P. Dapkus, R. Dupuis, A. Campbell, R. Johnson, H. Manasevit, L. Moudy. The use of a thin film of gallium arsenide on a low cost substrate appears to be a promising approach for the fabrication of low-cost high-efficiency solar cells.

Gallium arsenide films have been deposited on tungsten/graphite substrates at /sup 0/C by the reaction of gallium, hydrogen chloride, and arsine in a gas flow system. Get this from a library. Thin films of gallium arsenide on low-cost substrates.

[R P Ruth; United States. Energy Research and Development Administration. Division of Solar Energy.;]. Get this from a library. Thin films of gallium arsenide on low-cost substrates.

[N J Nelson; L W James; United States. Energy Research and Development Administration. Division of Solar Energy.]. Technical Report: Thin films of gallium arsenide on low-cost substrates. Quarterly technical progress report No.

8 and topical report No. 3, April 2-July 1, Author: R.P. Ruth, P.D. Dapkus, R.D. Dupuis, R.E. Johnson, H.M. Manasevit, L.A. Moudy, J.J. Yang, R.D. Yingl. Thin films of gallium arsenide on low-cost substrates. Quarterly project report No. 1, September 1, Novem Technical Report: Thin films of gallium arsenide on low-cost substrates.

Final report, July 5, July 2, In situ stress measurements during thermal cycling from room temperature to °C have been performed for thermally evaporated aluminum films with various thicknesses on silicon and gallium arsenide substrates. The as-deposited Al films on both substrates exhibit a tensile stress which significantly relaxes with time at room temperature.

They exhibit a compressive stress relaxation. Thin films of gallium arsenide on low-cost substrates. [Washington]: Dept of Energy ; Springfield, Va.: For sale by the National Technical Information Service, i.e. (OCoLC) Material Type: Government publication, National government publication: Document Type: Book: All Authors / Contributors: R P Ruth; Rockwell.

Abstract. Gallium oxide (Ga 2 O 3) thin films were produced by sputter deposition by varying the substrate temperature (T s) in a wide range (25–°C).The structure, morphology, optical, and mechanical properties of Ga 2 O 3 films were evaluated using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectrometry (RBS).

Get this from a library. Thin films of gallium arsenide on low-cost substrates. [Shirely S Chu; Southern Methodist University.; United States. Department of Energy.; United States. Energy Research and Development Administration.]. Single-crystal, thin-film GaAs PV modules provide a complementary thin-film approach and have achieved higher efficiencies than their.

polycrystalline and amorphous counterparts [1], [2] and low-cost manufacturing processes are being developed by reusing. the single-crystal substrates [3], [4].

This approach retains the. Polycrystalling gallium arsenide films deposited on tungsten/graphite substrates by the reaction of gallium, hydrogen chloride, and arsine have been used for the fabrication of MOS‐type solar cells.

The deposited films were oxidized in situ with an argon‐oxygen mixture and, in some cases, followed by a water‐vapor treatment. Gold was used as the barrier metal, and titanium oxide was used Cited by: Gallium arsenide films and solar cells on graphite substrates Article (PDF Available) in Journal of Applied Physics 50(9) - October with 42 Reads How we measure 'reads'.

Thin Solid Films, () Mechanical characteristics of aluminum thin films on silicon and gallium arsenide Jwo-Huei Jou and Cheng-Sheng Chung Department of Materials Science and Engineering, Tsing Hua University, Hsin Chu (Taiwan) (Received December 9, ; accepted ) Abstract In situ stress measurements during thermal cycling from room temperature to Cited by: 5.

A thin film is a layer of material ranging from fractions of a nanometer to several micrometers in thickness. The controlled synthesis of materials as thin films (a process referred to as deposition) is a fundamental step in many applications.

A familiar example is the household mirror, which typically has a thin metal coating on the back of a sheet of glass to form a reflective interface. The IV plots for a 60 nm thick Al 2 O 3 ALD film on Si and GaAs substrates are shown in Fig.

IV plots show very low currents on the order of 1 nA/cm 2 at low applied voltages. The low currents are attributed to a combination of leakage current through the insulating thin Al 2 O 3 ALD layer and interfacial oxide layer (i.e., SiO 2 layer for Si substrates and gallium oxide layer for GaAs Author: X.

Zhang, H.T. Ren, R. Li, G. Xiang. Electronic devices, coatings, displays, sensors, optical equipment, and numerous other technologies all depend on the deposition of thin films. Even when well-established methods exist for the production of high-quality films, there is still considerable interest in alternative methods that may be less expensive, more reliable, or capable of producing films with novel or improved properties.

A metal combination of AuBe/Pt/Au is employed as a new p-type ohmic contact with which an n-on-p single-junction GaAs thin-film solar cell on flexible substrate was successfully by: Gallium arsenide (GaAs) as a MEMS substrate is a brittle, difficult- to-process material [7] and the machining of GaAs, by diamond saw or by conventional laser, releases arsenic into the atmosphere.

This is in the form of either dust or as arsine gas.The influence of deposition conditions on structural and electrical properties of amorphous gallium arsenide (a-GaAs) thin films, deposited by RF sputtering at two substrate temperatures (glass.